inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1512 description drain current C i d =10a@ t c =25 drain source voltage- : v dss =900 (min) applications high voltage,high speed power switching. absolute maximum ratings(t a =25 ) symbol arameter value uni t v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 10 a p tot total dissipation@tc=25 150 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit rth j-c thermal resistance,junction to case 0.83 /w rth j-a thermal resistance,junction to ambient 35 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1512 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 1ma 900 v v gs( th ) gate threshold voltage v ds = v gs ; i d =1ma 2.5 3.5 5.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =5a 1.0 1.2 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds =900v; v gs = 0 500 ua v sd diode forward voltage i f =10a; v gs =0 0.96 1.44 v tr rise time v gs =10v;i d =10a;r l =25 120 180 ns ton turn-on time 160 240 ns tf fall time 110 165 ns toff turn-off time 350 425 ns pdf pdffactory pro www.fineprint.cn
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